Electron velocity-field characteristics of In[sub 0.52]Al[sub 0.48]As

Kim, H.S.; Tian, H.
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1202
Academic Journal
Presents the electron transport in n-type In[sub 0.52]Al[sub 0.48]As semiconductor. Achievement of the transport properties of the semiconductor; Calculation of velocity-field characteristics for different temperatures; Comparability of the electron properties of the semiconductor with those of materials lattice-matched to InP.


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