Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector

Frei, M.R.; Hayes, J.R.
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1193
Academic Journal
Demonstrates the fabrication of an InGaAs/InP heterojunction bipolar transistor with a reduced base-collector overlap area. Growth of the subcollector layer using chloride-transport vapor-phase epitaxy; Evidence of the quality of the regrowth over the planarized substrates; Current gain of common-emitter operation.


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