TITLE

Lateral straggling of B and P ions implanted in channeling and random directions of Si single

AUTHOR(S)
Raineri, Vito; Privitera, Vittorio
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1190
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the implantation of boron and phosphorus ions along the [100] axis or in a random direction of silicon wafers. Determination of two-dimensional isoconcentration contour lines at the substrate doping level; Comparison between the lateral distribution of ions implanted in a random direction and ions implanted along the [100] axis.
ACCESSION #
4232990

 

Related Articles

  • Beam Angular Divergence Effects in Ion Implantation. Horsky, T. N.; Current, M. I.; Hahto, S. K.; Bilbrough, D. G.; Jacobson, D. C.; Krull, W. A.; Goldberg, R. D.; Hamamoto, N.; Umisedo, S. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p403 

    An important difference between monomer ion beams and heavy molecular beams is a significant reduction in beam angular divergence and increased on-wafer angular accuracy for molecular beams. This advantage in beam quality stems from a reduction in space-charge effects within the beam. Such...

  • High-Resolution Mapping of Low-Dose Implants. Halim, Jeffri; Mineji, Akira; Faifer, Vladimir; Current, Michael // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p175 

    High spatial resolution sheet resistance measurements, based on analysis of junction photo-voltage (JPV) signals, are used to reveal subtle dose uniformity variations for 40 and 90 keV Boron implants in the dose range of 1011 B/cm2. The use of various combinations of electrostatic ion beam...

  • Enhanced elimination of implantation damage upon exceeding the solid solubility. Jones, Kevin S.; Prussin, S.; Weber, E. R. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4114 

    Presents a study which investigated the implantation of silicon wafers with gallium and phosphorus. Description of the activation energy for enhanced elimination of extrinsic category-II dislocation loops; Dissolution kinetics of defects; Examination of as-implanted morphology.

  • Phosphorus and boron implantation in 6H–SiC. Rao, Mulpuri V.; Gardner, Jason A.; Chi, P. H.; Holland, O. W.; Kelner, G.; Kretchmer, J.; Ghezzo, M. // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6635 

    Phosphorus and boron ion implantations were performed at various energies in the 50 keV–4 MeV range. Range statistics of P[sup +] and B[sup +] were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of...

  • Batch size effects on 300-mm ion implant productivity. Current, Michael I. // Solid State Technology;Sep96, Vol. 39 Issue 9, p192 

    Discusses the impact of the number of wafers in a transfer lot, system geometry and batch size on 300 millimeter ion implant productivity. Impact of the use of dummy wafers on implant operations; Three cases where no dummies are needed in routine operations; Impact of the choice of cassette lot...

  • A new era for high-current, low-energy ion implantation. Parrill, Thomas M.; Ameen, Michael S.; Graf, Michael; Mazzola, Richard // Solid State Technology;Nov2000, Vol. 43 Issue 11, p103 

    Examines basic issues associated with delivering low-energy ions to silicon wafers. Details on the delivery and control of low-energy ions; Information on the process control in ion implantation; Conclusion.

  • Japanese companies design multifunction minifab tools. Okumura, Katsuya; Mikata, Yu-ichi; Suguro, Kyoichi; Tsunashima, Yoshitaka; Shimazaki, Ayako // Solid State Technology;Jun2001, Vol. 44 Issue 6, p83 

    Focuses on a plan for the technologies and equipment required for a semiconductor minifab. Capabilities of the multifunctional thermal processing; Functions of stencil mask ion implantation in reducing process time and cost of complex system chips; Way to protect the wafers from contamination.

  • A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation. Demidov, E. S.; Karzanov, V. V.; Lobanov, D. A.; Markov, K. A.; Sdobnyakov, V. V. // Semiconductors;Jan2001, Vol. 35 Issue 1, p20 

    The effect of stimulating synthesis reactions for the Si[sub 3]N[sub 4] phase in nitrogen-enriched silicon layers under the influence of argon-ion implantation into the rear side of silicon wafers was investigated. Dependences of variations in the IR absorption and the resistivity of the...

  • Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation. Xiang Lu; Iyer, S. Sundar Kumar // Applied Physics Letters;11/10/1997, Vol. 71 Issue 19, p2767 

    Describes an ion-cut-silicon-on-insulator wafer fabrication technique with plasma immersion ion implantation (PIII). Relationship between the hydrogen implantation rate and the wafer size; Features of the PIII reactor; Feasibility of the PIII ion-cut process.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics