Lateral straggling of B and P ions implanted in channeling and random directions of Si single

Raineri, Vito; Privitera, Vittorio
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1190
Academic Journal
Details the implantation of boron and phosphorus ions along the [100] axis or in a random direction of silicon wafers. Determination of two-dimensional isoconcentration contour lines at the substrate doping level; Comparison between the lateral distribution of ions implanted in a random direction and ions implanted along the [100] axis.


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