Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated

Jackson, M.K.; Frankel, M.Y.
September 1992
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1187
Academic Journal
Examines the large-signal switching characteristics of an AlGaAs/InGaAs modulation-doped field-effect transistor on a picosecond (ps) time scale. Measurement of the drain voltage response to a steplike gate input; Achievement of a large-signal switching time of 6.2 ps; Observation of features deleterious to high-frequency device operation.


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