TITLE

High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 mum with low

AUTHOR(S)
Choi, H.K.; Eglash, S.J.
PUB. DATE
September 1992
SOURCE
Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1154
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the GaInAsSb/AlGaAsSb diode lasers with a quantum-well active region. Achievement of threshold current density and differential quantum efficiency; Device operating pulsed at heatsink temperatures; Obtainment of continuous wave output power by a device of the same structure.
ACCESSION #
4232977

 

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