TITLE

Resonance and switching in a native-oxide-defined Al[sub x]Ga[sub 1-x]As-GaAs quantum-well

AUTHOR(S)
El-Zein, N.; Holonyak Jr., N.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p705
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents data demonstrating laser diode with two parallel linear arrays of small coupled rectangular cavities delineated by oxidation of the high gap. Fabrication of laser diode array; Operation of the laser depending on the bias position; Optimization of the geometry, size, and number of the minicavities and coupling.
ACCESSION #
4232965

 

Related Articles

  • Ultraviolet nanolasers. Lerner, Eric J. // Industrial Physicist;Oct/Nov2001, Vol. 7 Issue 5 

    Features the ultraviolet diode lasers. Feature of the nanolaser; Availability of the product; Emission of ultraviolet photons.

  • High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers. Kim, J.G.; Shterengas, L.; Martinelli, R.U.; Belenky, G.L. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1926 

    We have fabricated and characterized 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm apertures. Continuous wave operation up to 500 mW was recorded at 16 °C from 2.7 μm lasers, while 160 mW was obtained from...

  • Injection locking of coupled-stripe diode laser arrays. Goldberg, L.; Taylor, H. F.; Weller, J. F.; Scifres, D. R. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p236 

    The control of the far-field beam pattern and the spectrum of 10-element laser diode array by injection locking to a single-mode master laser are described. With less than 3 mW of injected power an array output of 105 mW at a single frequency with a 0.5° wide far-field lobe is obtained....

  • In-phase locking in diffraction-coupled phased-array diode lasers. Wang, Shyh; Wilcox, Jaroslava Z.; Jansen, Michael; Yang, Jane J. // Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1770 

    Design criteria are presented for strong in-phase coupling of diffraction-coupled phased-array diode lasers. Theoretical predictions are confirmed by our experimental observations of double-lobe and single-lobe far-field patterns.

  • Nonlinear mixing and phase conjugation in broad-area diode lasers. Lucente, M.; Carter, G. M.; Fujimoto, J. G. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p467 

    Four-wave mixing is investigated in broad-area diode lasers. Two external fields are injected into the device using a phase conjugation geometry and the nonlinear four-wave mixing signal observed by performing spectrally resolved measurement of the far field. By varying the injection geometry,...

  • Injection locking characteristics of a 1 W broad stripe laser diode. Goldberg, L.; Chun, M. K. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1900 

    Single narrow far-field lobe emission is observed in an injection-locked high-power broad stripe laser. Lobe widths below 1.3 times the diffraction limit for the 160-μm-wide stripe were observed for power levels up to 1.0 W. Decrease in the power contained within the narrow lobe for high...

  • Spatial and frequency dependence of four-wave mixing in broad-area diode lasers. Lucente, M.; Fujimoto, J. G.; Carter, G. M. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1897 

    By injecting two external optical beams into a broad-area laser diode, four-wave mixing is generated via gain nonlinearities in the device. The nonlinear signals are observed by spectrally analyzing the transverse far-field profile of the emission from the device. By varying the injection angle...

  • Using diode lasers for atomic physics. Wieman, Carl E.; Hollberg, Leo // Review of Scientific Instruments;Jan1991, Vol. 62 Issue 1, p1 

    We present a review of the use of diode lasers in atomic physics with an extensive list of references. We discuss the relevant characteristics of diode lasers and explain how to purchase and use them. We also review the various techniques that have been used to control and narrow the spectral...

  • Operation of a single mode external-cavity laser diode array near 780 nm. Bayram, S. B.; Chupp, T. E. // Review of Scientific Instruments;Dec2002, Vol. 73 Issue 12, p4169 

    We have narrowed the spectral bandwidth of a commercial 2 W laser diode array to be less than 120 MHz near 780 nm. The external-cavity laser diode array system is a standard double-pass LittmanMetcalf configuration operating on a dominant single longitudinal mode.

  • Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers. Fukunaga, Toshiaki; Wada, Mitsugu; Hayakawa, Toshiro // Applied Physics Letters;7/8/1996, Vol. 69 Issue 2, p248 

    We report the reliable operation of strain-compensated InGaAs/InGaAsP/GaAs 1.06 μm separate confinement heterostructure single-quantum-well laser diodes with tensile-strained InGaAsP barriers grown on GaAs substrate. High band-gap strain-compensation barriers are used to suppress the carrier...

Share

Read the Article

Courtesy of your local library

Public Libraries Near You (See All)
Looking for a Different Library?

Other Topics