Characterization of SiO[sub 2]/Si(100) interface structure of ultrathin SiO[sub 2] films using

Fukuda, Hisashi; Yasuda, Makoto
August 1992
Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p693
Academic Journal
Presents information on the chemical bonding states of interfacial oxide layer close to the silicon oxide/silicon interface of ultrathin silicon oxide film. Origin of the interfacial oxide composition; Analysis of the results based on the methods used; Production of nonstoichiometric silicon oxide layer.


Related Articles

  • Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity. Batson, P. E. // Nature;12/23/1993 & 12/30/1993, Vol. 366 Issue 6457, p727 

    Discusses the use of standard electron energy-loss spectroscopy (EELS) with annular dark field (ADF) method to resolve the different bonding states of silicon atoms Si0, Si2+, Si4+ across a Si-SiO2 interface. Oxidation state of individual columns of unit cells; Possibility of a detailed...

  • Sp[sup 2] bonding distributions in nanocrystalline diamond particles by electron energy loss spectroscopy. Okada, Katsuyuki; Kimoto, Koji; Komatsu, Shojiro; Matsumoto, Seiichiro // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p3120 

    Nanocrystalline diamond particles with 200-500 nm in diameter have been prepared in a 13.56 MHz low pressure inductively coupled CH[sub 4]/CO/H[sub 2] plasma. The chemical bonding map was investigated by electron energy loss spectroscopy (EELS). The EEL spectrum shows a peak at 290 eV due to...

  • Electron energy-loss spectrometry studies of bonding in nanoscale Ni–SiO2 multilayers. Taylor, Seth T.; Gronsky, Ronald // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p251903 

    Electron energy-loss spectrometry in the transmission electron microscope is used to directly assess the nature of bonding at interfaces formed during alternating deposition of nanoscale Ni and SiO2 multilayers. Interfacial Ni–O bond formation near the interface is revealed by energy-loss...

  • Ion induced chemical bonding of carbon with Ta as studied by Auger electron spectroscopy and.... Sharma, J.K.N.; Bera, Santanu; Chakraborty, B.R. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3247 

    Examines the chemical bonding of carbon with tantalum (Ta) using Auger electron spectroscopy and slow electron energy loss spectroscopy (SEELS). Effect of carbide formation in Ta[sub 2]O[sub 5] films; Distinction of the SEELS of the Ta with graphitic carbon; Detection of carbide formation.

  • Evidences of alkali-induced softening of the oxygen-substrate bond. Politano, A.; Formoso, V.; Agostino, R. G.; Colavita, E.; Chiarello, G. // Journal of Chemical Physics;2/21/2008, Vol. 128 Issue 7, p074703 

    The interaction of oxygen with alkalis (Na, K) on Ni(111) was studied by high-resolution electron energy loss spectroscopy. Loss measurements revealed for the first time a softening of the O–Ni bond and, simultaneously, a strengthening of the alkali-Ni bond in the alkali+O coadsorbed...

  • Role of interfacial nitrogen in improving thin silicon oxides grown in N[sub 2]O. Carr, E.C.; Buhrman, R.A. // Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p54 

    Examines the chemical bonding of thin silicon oxides grown in nitrogen oxide films. Difference between the nitrogen profiles of rapid thermal annealer and furnace oxides; Effect of interface state generation on nitrogen percentage; Impact of nitrogen-silicon bonds on the chemical environment...

  • Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems. Lysaght, Patrick S.; Woicik, Joseph C.; Huang, Jeff; Oh, Jungwoo; Min, Byoung-Gi; Kirsch, Paul D. // Journal of Applied Physics;Oct2011, Vol. 110 Issue 8, p084107 

    Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si0.7Ge0.3/2 nm HfO2/2.5 nm TaN/950 °C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and...

  • Electron energy loss spectroscopy (EELS) of CH3NH2 adsorbed on Ni(100), Ni(111), Cr(100), and Cr(111). Baca, A. G.; Schulz, M. A.; Shirley, D. A. // Journal of Chemical Physics;12/1/1985, Vol. 83 Issue 11, p6001 

    Adsorbed CH3NH2 has been studied on Ni(100), Ni(111), Cr(100), and Cr(111) at 300 K using electron energy loss spectroscopy. The vibrational spectra indicate that molecular CH3NH2 exists on all four surfaces with bonding through the nitrogen lone pair, although a substantial amount of...

  • EELS measurements in single wall Boron Nitride nanotubes. Arenal, R.; Stephan, O.; Kociak, M.; Taverna, D.; Colliex, C.; Rubio, A.; Loiseau, A. // AIP Conference Proceedings;2004, Vol. 723 Issue 1, p293 

    We present here the results of an electron energy loss spectroscopy (EELS) study in scanning transmission electron microscopy (STEM) on boron nitride nanotubes (BN-NTs). The low and core-loss regions have been analyzed to provide by the same technique a combined information about chemical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics