Generation of positive charge in SiO[sub 2] thin films during electron irradiation

de Castro, A.J.; Fernandez, M.
August 1992
Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p684
Academic Journal
Presents an explanation of Auger energy shifts of the silicon peak in silicon oxide thin films in relation to electron trapped charge distribution. Establishment of a simple model to explain bond breaking events; Significance of the centroid dependence of spatial distribution to the beam energy; Usefulness of the Auger electron spectroscopy.


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