TITLE

Time resolved nonequilibrium phonon dynamics in the nonradiative decay of photoexcited forsterite

AUTHOR(S)
Demos, S.G.; Buchert, J.M.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p660
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the dynamics of nonequilibrium phonon populations involved in the initial steps of nonradiative decay of ions in a crystal. Significance of time resolved Raman scattering; Similarity in the temporal behavior of participating phonon modes; Analysis on the electron-lattice system dynamics.
ACCESSION #
4232949

 

Related Articles

  • Phonon confinement effects in the Raman scattering by TiO[sub 2] nanocrystals. Bersani, D.; Lottici, P. P.; Ding, Xing-Zhao // Applied Physics Letters;1/5/1998, Vol. 72 Issue 1 

    Nanocrystalline TiO[sub 2] has been obtained by a sol-gel process by controlling the crystal size through the water/alkoxide ratio. Raman spectra of anatase nanocrystals with average sizes of 9.5–13.4 nm are reported and the correlation between the Raman band shape (peak position and...

  • Shape-selective Raman scattering from surface phonon modes in aggregates of amorphous SiO2... Glinka, Yu. D.; Jaroniec, M. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3499 

    Studies the excitation dynamics for surface phonon modes (SPMs) of silica samples pretreated at temperatures ranging from 30-1000 degrees Celsius. Determination of depolarization factors and shape of nanoparticles; Correspondence of transverse-optical and longitudinal-optical bending phonon...

  • Raman studies of nitrogen incorporation in GaAs[sub 1-x]N[sub x]. Prokofyeva, T.; Sauncy, T.; Seon, M.; Holtz, M.; Qiu, Y.; Nikishin, S.; Temkin, H. // Applied Physics Letters;9/7/1998, Vol. 73 Issue 10 

    We report direct-backscattering Raman studies of GaAs[sub 1-x]N[sub x] alloys, for x≤0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm[sup -1] is found to red shift at a rate of -136±10 cm[sup -1]/x....

  • Redshift of the longitudinal optical phonon in neutron irradiated GaP. Kuriyama, K.; Miyamoto, Y. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3499 

    Studies the redshift of the longitudinal optical (LO) phonon relating to the defect structure in neutron-irradiated gallium phosphorus. Use of Raman scattering, electron paramagnetic resonance, x-ray diffraction and Fourier-transform methods in the study; Reduction of LO-transverse optical...

  • Observation of the transverse optical phonon mode in CdS film at 4880 Ã… excitation. Dai, C. M.; Chuu, Der-San // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p3056 

    Presents a study which observed the transverse optical (TO) phonon mode in CdS film at 4880 Ã… excitation. Outcome of the quantum size effect; Description of the Raman shift of the TO mode of CdS film; Reason for the abnormal occurrence of the TO mode at 4880 Ã… excitation.

  • Direct observation of second neighbor interactions for Cr[sup 4+] doped forsterite by resonance.... Calistru, Dana M.; Demos, S.G. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2207 

    Examines the second neighbor interactions for chromium cation doped forsterite by resonance Raman scattering. Use of second neighbor interaction to model the increase of internal vibrations; Dependence of tetrahedral stretching modes on frequency; Degrees of delocalization at the chromium...

  • Optical-active phonons in A3Fe2B″O9 (A=Ca, Sr; B″=Te, W) double perovskites. Silva, E. N.; Guedes, I.; Ayala, A. P.; López, C. A.; Augsburger, M. S.; Viola, M. del C.; Pedregosa, J. C. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 4, p043512-1 

    Raman scattering and infrared transmittance techniques are used to investigate the phonons of the Sr3Fe2TeO9 (SFTO), Sr3Fe2WO9 (SFWO), and Ca3Fe2WO9 (CFWO) double perovskites at 300 K. While SFTO and SFWO crystallize in a tetragonal structure belonging to the I4/m space with two formulas per...

  • Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering. Nakashima, S.; Kitamura, T.; Kato, T.; Kojima, K.; Kosugi, R.; Okumura, H.; Tsuchida, H.; Ito, M. // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p121913 

    The free carrier concentration of n-4H-SiC was deduced by Raman spectroscopy using LO phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free carrier concentration from the reading of the peak frequency of the LOPC mode in the concentration range from 1019 down to 1016...

  • Raman Spectroscopy and Translation Symmetry of Nano-Crystalline Structures. Shu-Lin Zhang // AIP Conference Proceedings;8/6/2010, Vol. 1267 Issue 1, p47 

    The article analyzes Raman spectroscopy of nano-crystalline (NC) semiconductors. It is stated that, smaller dispersion of phonon dispersion curves near the center of Brillouin zone can be considered as the reason for amorphous and no diameter-selective Raman scattering (DSRS) features which...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics