Suppression of stress-induced leakage current in ultrathin N[sub 2]O oxides

Ahn, J.; Kim, J.
June 1992
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p1809
Academic Journal
Examines the suppression of stress-induced leakage current in ultrathin nitrous oxide (N[sub 2]O) gate oxide. Influence of substrate electron injection on suppression; Analysis on the dependence of SILC on stress current density; Attribution of SILC suppression to the nitrogen incorporation during N[sub 2]O oxidation.


Related Articles

  • Reduced effective misfit in laterally limited structures such as epitaxial islands. Christiansen, S.; Albrecht, M. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p574 

    Examines the reduced effective misfit in laterally limited epitaxial islands and mesa structures. Details on the correction function ratio; Comparison between constant and average strain energy density; Influence of islanding on misfit strain distribution of island and substrate.

  • Strain tensor elements for misfit-strained [hhk]-oriented cubic crystals. Caridi, E.A.; Stark, J.B. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1441 

    Calculates the strain tensor components for (hkk)-oriented cubic crystals with misfit-generated strain. Derivation of the tensor elements via minimization of the crystal strain energy; Manifestation of the strain components; Production of a tetragonal distortion for all (hhk)-grown layers in...

  • Growth of strained InGaAs layers on InP substrates. Okada, T.; Weatherly, G.C. // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2185 

    Examines the role of tensile strain on the growth morphology and segregation of In1-xGaxAs alloys grown on InP substrates by molecular beam epitaxy. Facets on layers grown under tension; Confinement of composition segregation to peaks and valleys of faceted surfaces.

  • Superstrained superlattices: A processing approach. Dunstan, D. J.; Homewood, K. P. // Journal of Applied Physics;7/1/1989, Vol. 66 Issue 1, p462 

    Describes a proposed processing approach to producing superstrained quantum wells and superlattices. Limitations imposed on the use of the structures by critical thickness problems; Information on the thermal annealing of component elements in strained or unstrained superlattices.

  • High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate. Huang, F. Y.; Huang, F.Y.; Chu, M. A.; Chu, M.A.; Tanner, M. O.; Tanner, M.O.; Wang, K. L.; Wang, K.L.; U'Ren, G. D.; U'Ren, G.D.; Goorsky, M. S.; Goorsky, M.S. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe...

  • Effective second-order elastic constants of a strained cubic crystal in the finite strain theory. Rao, R. Ramji; Padmaja, A. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3320 

    Presents a study that investigated the effective second-order elastic constants of a strained cubic crystal in the finite strain theory. Use of the finite strain theory of Murnaghan in obtaining the expressions for the effective second-order elastic constants of a strained cubic crystal;...

  • Inventory of strategies for reducing anthropogenic emissions of N2O and potential reduction of emissions in the Netherlands Kroeze, Carolien // Mitigation & Adaptation Strategies for Global Change;1996, Vol. 1 Issue 2, p115 

    No abstract available.

  • Temperature dependence of threshold of strained quantum well lasers. Dutta, N.K.; Lopata, J.; Sivco, D.L.; Cho, A.Y. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1125 

    Analyzes the temperature dependence of threshold current of strained quantum well lasers both experimentally and theoretically. Measurement of carrier densities at threshold of the lasers using very short current pulse injection; Simplified calculation of the radiative, nonradiative...

  • Nucleation and coarsening during epitaxy on a substrate subject to periodic strain: Spatial ordering and size uniformity. Mattsson, Thomas R.; Metiu, Horia // Journal of Chemical Physics;12/8/2000, Vol. 113 Issue 22 

    The diffusion constant of an adsorbed atom changes if the surface is under strain. Because of this, it is reasonable to expect that all diffusion-dependent phenomena occur differently on a strained surface. Here we study how homogeneous, metal-on-metal epitaxy is modified when it takes place on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics