Hydrogen passivation of interface defects in GaAs/AlAs short-period superlattices

Fischer, R.; Peter, G.
June 1992
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2788
Academic Journal
Investigates the hydrogen passivation of interface defects in gallium arsenide/aluminum arsenide short-periods superlattices. Analysis on luminescence intensity and carrier lifetimes; Relevance of interface defects as nonradiative recombination centers; Discussion on relative combination with quantum efficiency approaching unity.


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