TITLE

Back-gated split-gate transistor: A one-dimensional ballistic channel with variable Fermi energy

AUTHOR(S)
hamilton, A.R.; Frost, J.E.F.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2782
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the quantized conductance of a one-dimensional ballistic channel in the two-dimensional electron gas of a back-gated split-gate transistor. Use of a standard Schottky split-gate fabricated with electron-beam lithography techniques; Incorporation of an epitaxially grown in situ back-gate to provide additional control of the carrier density.
ACCESSION #
4232927

 

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