TITLE

GaAs/AlAs quantum wells for electroabsorption modulators

AUTHOR(S)
Pezeshki, B.; Lord, S.M.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2779
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the implication of gallium arsenide/aluminum arsenide (GaAs/AlAs) quantum wells for electroabsorption modulators. Influence of th quantum-confined Stark effect on absorption changes in GaAs/AlAs quantum wells; Analysis on performance degradation and exciton resonance of AlAs lower indirect valleys; Discussion on exciton strength.
ACCESSION #
4232926

 

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