TITLE

Electrical and structural properties of Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunctions grown by

AUTHOR(S)
Paloura, E.C.; Ginoudi, A.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2749
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical and structural properties of undoped and selenium-doped Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy (MOVPE). Use of deep-level transient spectroscopy and transmission electron microscopy; Characterization of undoped MOVPE by a deep electron trap with an activation energy.
ACCESSION #
4232916

 

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