TITLE

Crystallization-induced stress in silicon thin films

AUTHOR(S)
Miura, Hideo; Ohta, Hiroyuki
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the crystallization-induced stress in silicon thin films. Detection of wafer curvature change using a scanning laser microscope; Evidence on compressive stress in as-deposited amorphous-silicon films; Factors influencing large tensile stress formation during crystallization reaction; Dependence of final residual stress on the film formation process.
ACCESSION #
4232915

 

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