In situ real-time determination of the free-carrier density in doped ZnSe films during molecular

Rouleau, C.M.; Park, R.M.
June 1992
Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2723
Academic Journal
Examines the in situ determination of free-carrier density in doped zinc selenide (ZnSe) films during molecular beam epitaxial growth. Evidence on the characteristic blue/green cathodoluminescence emission; Analysis on doped ZnSe films using the reflection high energy electron diffraction technique; Employment of cadmium selenide-based photoresistor.


Related Articles

  • Free hole gas and its coupling to phonons in ZnSe:Li layers. Olego, D.J.; Petruzzello, J.; Marshall, T.; Cammack, D. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p961 

    Examines the presence and coupling of free hole gas to longitudinal optical phonons in lithium doped zinc selenide semiconductor layers. Growth of layers by molecular beam epitaxy on gallium arsenide substrates; Impact of temperature on phonon spectra; Values for the hole concentration and...

  • Photoluminescence properties of nitrogen-doped ZnSe grown by molecular-beam epitaxy. Ziqiang Zhu; Takebayashi, Kazuhisa; Tanaka, Kiyotake; Ebisutani, Takashi; Kawamata, Junji; Yao, Takafumi // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p91 

    Examines the photoluminescence properties of nitrogen-doped zinc selenide epilayers grown by molecular beam epitaxy. Use of a microwave plasma source for nitrogen doping; Determination of the compensation effect caused by nitrogen-associated donors; Production of active nitrogen flux.

  • Molecular beam epitaxy of p-type conducting ZnSe and ZnSSe by simple nitrogen gas doping without.... Hishida, Yuji; Yoshie, Tomoyuki // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p270 

    Investigates the molecular beam epitaxy of p-type conducting zinc selenide and zinc-sulfur selenide. Application of simple nitrogen gas doping technique without plasma activation; Factors affecting the p-type conduction in the N[sub 2]-gas doped zinc selenide; Fabrication of light emitting...

  • Gas-source molecular beam epitaxy of ZnSe using elemental Zn and hydrogen selenide. Ohtsuka, Takeo; Horie, Kayoko; Akiyama, Naoki; Yao, Takafumi // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6006 

    Deals with a study which examined the growth of unintentionally doped zinc selenide by gas-source molecular beam epitaxy using zinc and thermally cracked hydrogen selenide. Electrical and optical properties of zinc selenide epilayers; Experimental procedures; Growth rate of zinc selenide epilayers.

  • Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source. Calhoun, L. C.; Park, R. M. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p490 

    Investigates the phosphorous doping of zinc selenide (ZnSe) during molecular beam epitaxial growth. Use of an atomic phosphorus (P) source designed for elemental phosphorus handling; Characterization of the atomic phosphorus source; Analysis of photoluminescence of ZnSe:P films.

  • Influence of the As overpressure during the molecular beam epitaxy growth of Si-doped (211)A and.... Pavesi, L.; Henini, M. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2846 

    Investigates the influence of arsenic overpressure during molecular beam epitaxy (MBE) growth of silicon-doped (211)A and (311)A gallium arsenide (GaAs). Consequences of Si-doped GaAs growth on (211)A surface; Conversion of arsenic vacancy defect into Ga vacancy and Ga antisite defect;...

  • Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using.... Abernathy, C.R.; Wisk, P.W.; Pearton, S.J.; Ren, F. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p258 

    Investigates the feasibility of magnesium (Mg) doping using bis-cyclopentadienyl magnesium by metalorganic molecular beam epitaxy. Measurement of indium gallium arsenide (InGaAs) and indium phosphide (InP); Difference in the Mg incorporation rate between the InP and InGaAs; Factors affecting the...

  • Epitaxial growth of p-type ZnMgSSe. Okuyama, Hiroyuki; Kishita, Yuko // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p904 

    Examines the growth of n-doped p-type ZnMgSSe by molecular beam epitaxy. Induction of nitrogen by electron cyclotron resonance plasma; Observation on the maximum net acceptor concentration; Activation energy of the nitrogen acceptor; Determination of the band-gap energy.

  • Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy. Chang, J. H.; Takai, T.; Koo, B. H.; Song, J. S.; Handa, T.; Yao, T. // Applied Physics Letters;8/6/2001, Vol. 79 Issue 6 

    N-type ZnTe layers with high electron concentration are grown by molecular-beam epitaxy using aluminum as the donor species. The ZnTe:Al layers show a high structural quality with a narrow x-ray diffraction linewidth (24 arcsec) and a high carrier concentration up to n=4×10[sup...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics