Room-temperature recombination of point defects produced in silicon p-n junctions by light ion

Germana, R.S.; Campisano, S.U.
April 1992
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1726
Academic Journal
Investigates the room-temperature recombination of point defects produced in silicon p-n junctions by light ion irradiation. Characterization of the irradiated materials; Defect profiling by current-voltage characteristics; Energy level used in characterizing the defects responsible for the reverse current of irradiated silicon diodes.


Related Articles

  • Role of silicon surface in the removal of point defects in ultrashallow junctions. Sultan, A.; Banerjee, S.; List, S.; Rodder, M. // Applied Physics Letters;10/7/1996, Vol. 69 Issue 15, p2228 

    The role of the Si surface in the annihilation of point defects has been studied for ultrashallow p+/n junctions. The dopant and defect distributions for low-energy implants lie within a few hundred angstroms of the surface. The proximity of the Si surface has been shown to help in the efficient...

  • Novel electrical and annealing properties of defects in electron irradiated silicon p+-n junctions. Wang, F. P.; Sun, H. H.; Lu, F. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1535 

    Presents a study that investigated the electrical and annealing properties of defects in electron irradiated silicon p[sup+]-n junctions. Background on the application of electron paramagnetic resonance in determining defects in silicon introduced by electron irradiation; Analysis of the...

  • Generation phenomena of localized interface states induced by irradiation and post-irradiation annealing at the Si/SiO2 interface. Kimura, Mikihiro // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4388 

    Presents a study that investigated the generation phenomena and mechanisms of localized interface states at the silicon/silicon oxide interface, induced by irradiation and post-irradiation annealing using cobalt gamma rays. Experimental details; Results of the study; Summary and conclusions.

  • Fast neutron irradiation for Czochralski grown silicon. Yuesheng Xu; Yangxian Li // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2807 

    Examines the invention of excellent intrinsic gettering through interaction between impurities and defects introduced by fast neutron irradiation into silicon. Irradiation of Czochralski grown silicon; Change of quality and density of point defects; Manifestation on the controlled precipitation...

  • The influence of ion flux on defect production in MeV proton-irradiated silicon. Hallén, A.; Fenyö, D.; Sundqvist, B. U. R.; Johnson, R. E.; Svensson, B. G. // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p3025 

    Reports on the influence of ion flux on defect production in MeV proton-irradiated silicon. Production of stable vacancy-related point defects in proton-irradiated silicon; Computer simulations of the defect generation kinetics; Preparation of samples used in the experiments.

  • The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass. Parchinski&icaron;, P. B.; Vlasov, S. I.; Nasirov, A. A. // Semiconductors;Nov2004, Vol. 38 Issue 11, p1304 

    The effect of γ-ray radiation on the density of surface states at the interface between silicon and lead–borosilicate glass is studied. It is established that, at radiation doses higher than 106 rad, a local peak in the surface-state density at E = Ec – (0.32 ± 0.04) eV is...

  • Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a.... Eryu, Osamu; Okuyama, Yasuo // Applied Physics Letters;10/2/1995, Vol. 67 Issue 14, p2052 

    Examines the formation of a p-n junction in n-type silicon carbide (6H-SiC) by aluminum doping. Use of pulsed laser doping method; Irradiation of 6H-SiC substrate in atmosphere by an KrF excimer laser; Determination of the depth profile of aluminum by secondary ion mass spectroscopy; Analysis...

  • Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator. Hamilton, J. J.; Collart, E. J. H.; Bersani, M.; Giubertoni, D.; Gennaro, S.; Bennett, N. S.; Cowern, N. E. B.; Kirkby, K. J. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p73 

    Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR)...

  • Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals. Jivanescu, M.; Stesmans, A.; Zacharias, M. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p103518 

    An extensive electron spin resonance (ESR) analysis has been carried out on structures comprised of Si nanoparticles (∼2 nm across) embedded in a regular pattern in an amorphous SiO2 matrix, fabricated by the SiO/SiO2 superlattice approach, with the intent to reveal and quantify occurring...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics