TITLE

Room-temperature recombination of point defects produced in silicon p-n junctions by light ion

AUTHOR(S)
Germana, R.S.; Campisano, S.U.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1726
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the room-temperature recombination of point defects produced in silicon p-n junctions by light ion irradiation. Characterization of the irradiated materials; Defect profiling by current-voltage characteristics; Energy level used in characterizing the defects responsible for the reverse current of irradiated silicon diodes.
ACCESSION #
4232890

 

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