TITLE

Growth of InAs and (InAs)[sub 1](GaAs)[sub 5] superlattice by atomic layer epitaxy using

AUTHOR(S)
Mori, Kazuo; Sugou, Shigeo
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1717
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of indium arsenide (InAs) superlattice by metalorganic atomic layer epitaxy using dimethylindium chloride. Generation of monolayer-unit growth; Self-limitation of the InAs and gallium arsenide growth; Temperature range of the epitaxial growth.
ACCESSION #
4232887

 

Related Articles

  • Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice. Tischler, M. A.; Katsuyama, T.; El-Masry, N. A.; Bedair, S. M. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p294 

    GaAsP-InGaAs strained-layer superlattices grown lattice matched to GaAs have been used to reduce the density of threading dislocations originating from the GaAs substrate. GaAs epitaxial layers grown on the GaAsP-InGaAs superlattice buffer layers showed a dislocation density lower by at least an...

  • High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy. Wu, Y. H.; Yang, H.; Ishida, A.; Fujiyasu, H.; Nakashima, S.; Tahara, K. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p239 

    High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to...

  • Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique. Azoulay, R.; Remiens, D.; Menigaux, L.; Dugrand, L. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1857 

    An important issue in the realization of monolithic optical circuits is the coupling of laser to optical waveguides. To obtain these structures, we have studied the epitaxial growth of GaAs/GaAlAs superlattices by organometallic vapor phase epitaxy on patterned substrates, with mesa along the...

  • Observation of resonant and stimulated Raman scattering in ZnSe/CdSe quantum wells grown by.... Chung, H.Y.A.; Uhle, N. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1378 

    Reports the growth of short period zinc selenide/cadmium selenide strained layer superlattices on (100) gallium arsenide surface by atomic layer epitaxy. Characterization of the superlattice using x-ray diffraction and Raman scattering; Calculation of the superlattice period; Observation of a...

  • Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures. Bedair, S. M.; Humphreys, T. P.; El-Masry, N. A.; Lo, Y.; Hamaguchi, N.; Lamp, C. D.; Tuttle, A. A.; Dreifus, D. L.; Russell, P. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p942 

    Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs substrates, a GaAs-InxGa1-xAs superlattice...

  • InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy. Lee, H. Y.; Crook, M. D.; Hafich, M. J.; Quigley, J. H.; Robinson, G. Y.; Li, D.; Otsuka, N. // Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2322 

    Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double...

  • GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm. Schubert, E. F.; Fischer, A.; Horikoshi, Y.; Ploog, K. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p219 

    A new type of semiconductor superlattice laser grown by molecular beam epitaxy is realized in GaAs. The active region of the injection laser consists of alternating n and p Dirac-delta doped layers resulting in a sawtooth-shaped conduction-band and valence-band edge. The band gap of this new...

  • Growth of single-crystal metastable (GaAs)1-x(Si2)x alloys on GaAs and (GaAs)1-x(Si2)x/GaAs strained-layer superlattices. Mei, D. H.; Kim, Y.-W.; Lubben, D.; Robertson, I. M.; Greene, J. E. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2649 

    Epitaxial zinc blende structure metastable (GaAs)1-x(Si2)x alloys have been grown with 0

  • High-resolution x-ray characterization of low-temperature GaAs/As superlattice grown by.... Cheng, T.M.; Chang, C.Y. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3626 

    Investigates the high-resolution x-ray characterization of low-temperature (LT) gallium arsenide (GaAs)/As superlattice grown by molecular beam epitaxy. Evolution of the x-ray rocking curves; Provision of the semi-insulating property of LT material; Formation of the GaAs/As superlattice structure.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics