Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 degrees C by chemical

Golecki, I.; Reidinger, F.
April 1992
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1703
Academic Journal
Investigates the single-crystalline, epitaxial cubic silicon carbide films grown on (100) silicon by chemical vapor deposition. Observation on the epitaxial growth temperature; Exclusion of surface carbonization step and halogenated compounds in the study; Comparison to the crystalline quality of commercial films.


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