TITLE

Formation of deep complexes in ZnSe during ohmic contact annealing

AUTHOR(S)
Heuken, M.; Sollner, J.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1694
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the formation of ohmic contacts to zinc selenide (ZnSe) grown by metalorganic vapor-phase epitaxy on gallium arsenide. Effects of strain and gallium outdiffusion on ohmic contact properties; Fabrication of optoelectronic devices from ZnSe epitaxial layers; Dependence of the barrier thickness at the metal-semiconductor interface on dopant concentration.
ACCESSION #
4232879

 

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