TITLE

Photoluminescence study of lateral carrier confinement and compositional intermixing in

AUTHOR(S)
Chalmers, S.A.; Weman, H.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1676
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the photoluminescence study of lateral carrier confinement and compositional intermixing in (aluminum, gallium)antimony lateral superlattices. Comparison to the photoluminescence of (aluminum, gallium)antimony alloy quantum well; Deduction of compositional intermixing and lateral carrier confinement; Calculation of the lateral content.
ACCESSION #
4232873

 

Related Articles

  • Electronic and optical properties of periodically Si delta-doped InP grown by low pressure... Souza, P.L.; Yavich, B.; Pamplona-Pires, M.; Henriques, A. B.; Gonçcalves, L. C. D. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1700 

    Investigates the mobility and photoluminescence characteristics of a series of Si delta-doped InP superlattices as a function of the superlattice period. Electronic transport; Broad band emission detected for the periodic structures at energies higher than the InP band gap; Depth profile.

  • CdTe photoluminescence in HgTe-CdTe superlattices. Feldman, Bernard J.; Wroge, M. L.; Leopold, D. J. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1516 

    Presents a study which investigated CdTe photoluminescence in HgTe-CdTe superlattices. Details of the experimental techniques used; Explanation for the presence of deep-level lines in the superlattices; Illustration of the liquid-helium photoluminescence spectrum of HgTe-CdTe superlattice.

  • Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice. Guan, Z. P.; Kobayashi, T. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2074 

    The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in...

  • Effect of growth interruptions on the interfaces of InGaAs/AIAsSb superlattice. Georgiev, Nikolai; Mozume, Teruo // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2371 

    Investigates the effect of growth interruption times combined with selective group-V species exposure of short-period superlattice structure with photoluminescence, x-ray diffraction and reflection high-energy electron diffraction. X-ray diffraction spectrum of a 30-period superlattice growth...

  • Photoluminescence from Si/Ge superlattices. Montie, E. A.; van de Walle, G. F. A.; Gravesteijn, D. J.; van Gorkum, A. A.; Bulle-Lieuwma, C. W. T. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p340 

    We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1-xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the...

  • Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device. Kunold, A.; Pereyra, P. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5018 

    The optical response of an AlGaN/GaN/(In[sub x]Ga[sub 1-x]N)[sup n]/GaN/AlGaN heterostructure is obtained from precise, and comparatively simple, transition probability calculations. A comprehensive approach to evaluate these quantities from rigorous expressions of the heterostructure's energy...

  • Layer intermixing in heavily carbon-doped AlGaAs/GaAs superlattices. Szafranek, I.; Szafranek, M.; Cunningham, B. T.; Guido, L. J.; Holonyak, N.; Stillman, G. E. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5615 

    Investigates layer intermixing in heavily carbon-doped AlGaAs/GaAs superlattices. Details of experimental techniques used; Analysis of the dominant feature in the low-temperature photoluminescence spectra of superlattice crystals; Effects of encapsulation on the extent of interface smearing in...

  • Photoluminescence studies of ZnTe-CdTe strained-layer superlattices. Miles, R. H.; Wu, G. Y.; Johnson, M. B.; McGill, T. C.; Faurie, J. P.; Sivananthan, S. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1383 

    Photoluminescence from ZnTe-CdTe strained-layer superlattices has been observed for the first time. Superlattices with CdTe and ZnTe layer thicknesses between 20 and 51 Ã… have been compared with CdxZn1-xTe alloys. The superlattices display intense visible photoluminescence which is observed...

  • Photoluminescence and the band structure of InAsSb strained-layer superlattices. Kurtz, S. R.; Osbourn, G. C.; Biefeld, R. M.; Lee, S. R. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p216 

    Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of...

  • Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices. Beery, J. G.; Laurich, B. K.; Maggiore, C. J.; Smith, D. L.; Elcess, K.; Fonstad, C. G.; Mailhiot, C. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p233 

    We describe the growth, ion beam, and photoluminescence characterization of Ga1-xInxAs/GaAs strained-layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics