Destruction of the quantum well structure of thin silicon-germanium superlattices by ion

Freiman, W.; Beserman, R.
April 1992
Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1673
Academic Journal
Investigates the destruction of the quantum well structure of thin silicon-germanium (Ge) superlattices (SL) by ion implantation. Effect of arsenic ion implantation into the SL; Transition from a SL structure to a mixed crystal; Raman spectra of Ge-implanted SL.


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