High quality GaAs on Si by conformal growth

Pribat, D.; Gerard, B.
April 1992
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2144
Academic Journal
Proposes a technique which allows the growth of low defect density gallium arsenide (GaAs) films on silicon substrates. Use of a Si[sub 3]N[sub 4] capping layer for growth confinement; Basis of the technique; Factor attributed to the reduction of dislocation density in GaAs films.


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