TITLE

High quality GaAs on Si by conformal growth

AUTHOR(S)
Pribat, D.; Gerard, B.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Proposes a technique which allows the growth of low defect density gallium arsenide (GaAs) films on silicon substrates. Use of a Si[sub 3]N[sub 4] capping layer for growth confinement; Basis of the technique; Factor attributed to the reduction of dislocation density in GaAs films.
ACCESSION #
4232855

 

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