TITLE

Dc characterization of the Ga[sub 0.51]In[sub 0.49]P/GaAs tunneling emitter bipolar transistor

AUTHOR(S)
Lu, S.S.; Wu, C.C.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2138
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of Ga[sub 0.51]In[sub 0.49]P/gallium arsenide tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy. Measurement of the bipolar transistors at varying temperatures; Comparison between the thick and thin barriers in terms of current gain; Cause of the functional dependence of gain on thickness.
ACCESSION #
4232853

 

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