Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursor

Chen, K.M.; Castro, T.
April 1992
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2132
Academic Journal
Investigates the heteroepitaxial growth of aluminum arsenide (AlAs) thin films by metalorganic molecular beam epitaxy using dimethylethylamine alane as an Al precursor. Use of reflection high-energy electron diffraction (RHEED); Implication of RHEED intensity oscillations for the AlAs layer-by-layer growth mode; Link of growth rate to DMEAA partial pressure.


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