Influence of ionized impurities on the linewidth of intersubband transitions in GaAs/GaAlAs

Dupont, E.B.; Delacourt, D.
April 1992
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2121
Academic Journal
Investigates the influence of ionized impurities on the linewidth of intersubband transitions in gallium arsenide/gallium aluminum arsenide quantum wells. Factors attributed to the mid-infrared transition linewidth; Influence of temperature on the scattering process; Use of molecular beam epitaxy.


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