Impact ionization and positive charge formation in silicon dioxide films on silicon

DiMaria, D.J.; Arnold, D.
April 1992
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2118
Academic Journal
Investigates the impact ionization and positive charge formation in silica (SiO[sub 2]) films on silicon (Si). Cause of the band-gap ionization; Demonstration of hole currents in the substrate circuit of n-channel field-effect transistors; Observation of positive charges at the substrate-Si/SiO[sub 2] interface at low injected-carrier fluences.


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