TITLE

Formation of p[sup +]n junctions by Si[sup +]+B[sup +] implantation and laser annealing

AUTHOR(S)
Juang, M.H.; Cheng, H.C.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.
ACCESSION #
4232836

 

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