Electronic structure of light-emitting porous Si

Vasquez, R.P.; Fathauer, R.W.
February 1992
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p1004
Academic Journal
Examines the electronic structure of light-emitting porous silicon (Si). Use of x-ray photoelectron spectroscopy; Detection of oxygen traces on hydrogen fluoride-etched samples; Implication for the consideration of oxides as a significant component of porous Si; Demonstration on the amorphous Si content of the near-surface region of high porosity films.


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