TITLE

Photoelectrochemical conductivity selective etch stops for SiC

AUTHOR(S)
Shor, J.S.; Osgood, R.M.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p1001
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the photoelectrochemical conductivity selective etch stops for silicon carbide (SiC). Details on the potential use of SiC semiconductor for high temperature and high frequency applications; Implication of SiC for etchant use in patterning devices; Demonstration on the patterning of n-type SiC epilayer.
ACCESSION #
4232810

 

Related Articles

  • Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in... Padiyath, R.; Wright, Robert L.; Chaudry, M.I.; Babu, S.V. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1053 

    Studies the reactive ion etching of monocrystalline and polycrystalline Beta-silicon carbide in CF[su 4]/O[sub 2] mixtures. Comparison of the etch rates between monocrystalline and polycrystalline silicon carbide; Effects of the addition of oxygen to CF[sub 4] on etch rates; Occurrence of...

  • Low-temperature vapor-phase etching of silicon carbide by dioxygen difluoride. Moalem, M.; Olander, D.R. // Applied Physics Letters;6/19/1995, Vol. 66 Issue 25, p3480 

    Demonstrates a low-temperature vapor-phase etching of silicon carbide semiconductor material by dioxygen difluoride (FOOF). Utilization of a design based on thermal-atomization technique in generating the FOOF; Percentage of the FOOF molecules forming silicon tetrafluoride and carbon monoxide;...

  • Photoluminescence of anodized silicon carbide. Agekyan, V. F.; Stepanov, Yu. A.; Lebedev, A. A.; Rud’, Yu. V. // Semiconductors;Feb97, Vol. 31 Issue 2, p202 

    The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the...

  • High etch rates of SiC in magnetron enhanced SF[sub 6] plasmas. McLane, G.F.; Flemish, J.R. // Applied Physics Letters;6/24/1996, Vol. 68 Issue 26, p3755 

    Investigates the magnetron enhanced reactive ion etching of silicon carbide (SiC) in SF[sub 6] plasmas. Determination of the etch rate a function of cathode power density, pressure and flow rate; Detection of highest SiC etch rates at low cathode bias voltage; Derivation of anisotropic etch...

  • Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications. Stonas, A. R.; Margalith, T.; DenBaars, S. P.; Coldren, L. A.; Hu, E. L. // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1945 

    The authors have developed a wet band gap-selective photoelectrochemical etching process to produce deep undercuts (∼500 μm) into InGaN/GaN heterostructures. These undercuts were used in a lift-off process which successfully transferred device-scale (100 μm diameter, 5 μm thick)...

  • Photoelectrochemical characterization of 6H-SiC. van de Lagemaat, J.; Vanmaekelbergh, D.; Kelly, J.J. // Journal of Applied Physics;6/1/1998 Part 1 of 2, Vol. 83 Issue 11, p6089 

    Provides information on a study which characterized the n-type 6H-silicon carbide (SiC), using photoelectrochemical methods. Dependence of the flat-band potential; Information on the minority carrier diffusion length; Details on the usage of electrical impedance spectroscopy; Results of the study.

  • Selective-area room temperature visible photoluminescence from SiC/Si heterostructures. Steckl, A.J.; Su, J.N.; Xu, J.; Li, J.P.; Yuan, C.; Yih, P.H.; Mogul, H.C. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1419 

    Examines the production of selective-area room temperature visible photoluminescence (PL) from silicon carbide (SiC)/Si heterostructures. Use of CHF[sub 3]/oxygen gas in the reactive ion etching of the materials; Effect of short anodization time on PL peak; Transmission of field emission...

  • Using focused ion beam damage patterns to photoelectrochemically etch features in III-V materials. Cummings, K. D.; Harriott, L. R.; Chi, G. C.; Ostermayer, F. W. // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p659 

    A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material...

  • Stability towards photoelectrochemical etching in Ga(As, P) alloys. Carlsson, Per; Holmström, Bertil; Samuelson, Lars // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p530 

    Studies the stability towards photoelectrochemical etching on gallium alloys. Applications of III-V semiconductors; Methodology of the study; Discussion on the results of the study.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics