Sensitivity of resonant excitation and photoluminescence excitation measurements to exciton

Reynolds, D.C.; Evans, K.R.
February 1992
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p962
Academic Journal
Investigates the sensitivity of resonant and photoluminescent excitation measurements to exciton localization effects in gallium arsenide (GaAs)/aluminum GaAs quantum wells. Evidence on effective submonolayer well width fluctuations; Predominance of localized excitons; Information on the free diffusion of delocalized excitons to differing regions.


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