Selective and epitaxial deposition of beta-FeSi[sub 2] on silicon by rapid thermal

Regolini, J.L.; Trincat, F.
February 1992
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p956
Academic Journal
Examines the selective and epitaxial deposition of beta-FeSi[sub 2] on silicon by rapid thermal processing (RTP)-chemical vapor deposition onto patterned silicon wafers. Use of a solid iron source with an RTP system; Analysis on the extrinsic conductivity energy levels from the valence band; Implication of extrinsic conductivity levels for observed infrared quenching.


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