TITLE

Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3-1.6 microm

AUTHOR(S)
Dodabalapur, Ananth; Chang, T.Y.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p929
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the characteristics of resonant-cavity heterojunction bipolar phototransistors grown on indium phosphide substrates. Details of the Fabry-Perot cavity; Implication of stack and active layer thickness for resonant absorption; Achievement of photocurrent response enhancement; Measurement of a direct current phototransistor current and optical gain.
ACCESSION #
4232785

 

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