TITLE

Resonant cavity light-emitting diode

AUTHOR(S)
Schubert, E.F.; Wang, Y.-H.
PUB. DATE
February 1992
SOURCE
Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p921
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines a concept of a resonant cavity light-emitting diode (RCLED). Restriction of the optical emission from the active region to the modes of the cavity; Comparison between RCLED and conventional LED spectral purity and emission intensity; Presentation of a top-emitting RCLED structure with quarter wave mirrors grown by molecular beam epitaxy.
ACCESSION #
4232782

 

Related Articles

  • High-efficiency InGaAIP/GaAs visible light-emitting diodes. Sugawara, H.; Ishikawa, M.; Hatakoshi, G. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1010 

    Studies high-efficiency InGaAlP surface emission light emitting diodes (LED). Expansion of the LED light emission area; External quantum efficiency; Electroluminescence; Emission spectra.

  • Design of multiwavelength resonant cavities for white organic light-emitting diodes. Shiga, Takahiro; Fujikawa, Hisayoshi; Taga, Yasunori // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p19 

    We have developed a multiwavelength resonant cavity (MWRC) optical device designed for organic light-emitting diodes (OLEDs). This device consists of two or more wavelength-selective mirrors, where each resonant peak can be adjusted independently, resulting in enhancement of the luminance and...

  • Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting.... Sun, C.J.; Anwar, M. Zubair // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2978 

    Examines stimulated emission in indium gallium nitride/gallium nitride multiple quantum well light-emitting diodes with varying widths and barrier thickness of the quantum wells. Analysis on emission peak wavelength shifts; Estimation on effective conduction- and valence-band discontinuities;...

  • Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection. Asshoff, Pablo; Löffler, Wolfgang; Zimmer, Jochen; Füser, Heiko; Flügge, Harald; Kalt, Heinz; Hetterich, Michael // Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p202105 

    We investigate the fidelity of electron spin initialization in quantum dots utilizing nanosecond-pulsed electrical spin injection through a semimagnetic spin aligner in a spin light-emitting diode. At the onset of the electroluminescence signal, the circular polarization degree of the emitted...

  • Color variation with electroluminescent organic semiconductors in multimode resonant cavities. Dodabalapur, A.; Rothberg, L.J. // Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2308 

    Examines the color variation in electroluminescent organic semiconductors in multimode resonant cavities. Focus on optical properties of multi-mode resonant-cavity light emitter diode; Integration of multimode microcavities and electroluminescent devices in color mixture; Role of optical...

  • Scientists squeeze more light from organic LEDs. Powell, Paula Noaker // Laser Focus World;Mar2001, Vol. 37 Issue 3, p41 

    Provides information on the testing of light emitting diodes in producing lights in incoming negative and positive electrical charges. Use of the photoinduced absorption-detected magnetic resonance technique.

  • Resonant cavity light emitting diodes with two single quantum wells of different widths. Kato, Toshihiro; Mizuno, Yoshiyuki; Hirotani, Masumi; Saka, Takashi; Horinaka, Hiromichi // Journal of Applied Physics;3/1/2001, Vol. 89 Issue 5, p2907 

    Resonant cavity light emitting diodes containing two single quantum wells of different well width were fabricated. The quantum wells, consisting of GaAs with AlGaAs barriers, were placed in separate antinodes of the optical emission mode in a Fabry-Perot cavity whose optical length is twice that...

  • Microcavity organic light-emitting diodes on silicon. Jean, Fre´de´rique; Mulot, Jean-Yves; Geffroy, Bernard; Denis, Christine; Cambon, Pierre // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1717 

    We study resonant-cavity organic light-emitting diodes made on silicon substrates. The device structure is Al/indium-tin-oxide (ITO)/copper phthalocyanine (CuPc)/a triphenylamine derivative (TPD)/tris-(8-hydroxyquinoline) aluminum (Alq[sub 3])/cathode, where the cathode is a semitransparent Al...

  • InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures. Grasse, Christian; Wiecha, Peter; Gruendl, Tobias; Sprengel, Stephan; Meyer, Ralf; Amann, Markus-Christian // Applied Physics Letters;11/26/2012, Vol. 101 Issue 22, p221107 

    We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics