GaAs p-n junction formed in quantum wire crystals

Haraguchi, Keiichi; Katsuyama, Toshio
February 1992
Applied Physics Letters;2/10/1992, Vol. 60 Issue 6, p745
Academic Journal
Forms a p-n junction in a cross-sectional area of a gallium arsenide wire crystal. Employment of the ultrafine cylindrical growth by metalorganic vapor phase epitaxy; Observation of intensive light emission by current injection; Possibility of ultrafine optoelectronic devices with quantum-size p-n junction.


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