TITLE

Comparison of thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of

AUTHOR(S)
Shenoy, Jayarama N.; Cooper Jr., James A.
PUB. DATE
February 1996
SOURCE
Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p803
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares the thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of silicon carbide. Similarity of oxidation rates and interfacial quality; Suitability of the 4H polytype in developing field effect transistors; Effect of postoxidation annealing.
ACCESSION #
4227703

 

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