Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP

Epler, J.E.; Sochtig, J.
October 1994
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1949
Academic Journal
Examines the evolution of surface topography during epitaxial growth of lattice matched indium phosphide(InP)/indium gallium arsenide(InGaAs)/InP heterostructures on InP substrate. Use of in situ elastic light scattering and ex situ atomic force microscopy; Growth transition of the structures; Effects of growth pause after the InGaAs quantum well.


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