Double two-dimensional electron gas structure formed by molecular beam epitaxy regrowth on an ex

Evans, R.J.; Grimshaw, M.P.
October 1994
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1943
Academic Journal
Examines the formation of double two-dimensional electron gases in gallium arsenide (GaAs) quantum well on an ex situ patterned n[sup +]-GaAs back gate. Factors controlled by the patterned back gate; Use of four terminal resistance and magnetoresistance data; Implications for the fabrication of velocity modulated transistor.


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