TITLE

Fast growth of hydrogenated amorphous silicon from dichlorosilane

AUTHOR(S)
Nakata, Masami; Wagner, Sigurd
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1940
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a method for the growth rate of hydrogenated amorphous silicon films from a glow discharge in dichlorosilane. Growth rate of films at substrate temperatures between 200 and 300 degree Celsius; Correlation of growth rate with hydrogen and chlorine concentrations in the film; Properties of the films.
ACCESSION #
4227667

 

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