Temperature dependence of equilibrium electron density in AlGaAs governed by Sn-related DX centers

Zdansky, K.
October 1994
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1933
Academic Journal
Examines the temperature dependence of equilibrium electron density in aluminum gallium arsenide semiconductors. Measurement of p-n junction as a function of frequency and temperature; Presence of two-types of tin-related DX centers; Verification of the binding energies in the DX centers.


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