TITLE

Temperature dependence of equilibrium electron density in AlGaAs governed by Sn-related DX centers

AUTHOR(S)
Zdansky, K.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1933
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the temperature dependence of equilibrium electron density in aluminum gallium arsenide semiconductors. Measurement of p-n junction as a function of frequency and temperature; Presence of two-types of tin-related DX centers; Verification of the binding energies in the DX centers.
ACCESSION #
4227664

 

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