TITLE

Hydrogen annealed silicon-on-insulator

AUTHOR(S)
Sato, Nobuhiko; Yonehara, Takao
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1924
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of hydrogen annealing on silicon-on-insulator materials. Reduction of high boron concentration in the materials; Surface characteristics of the insulator after annealing; Migration of silicon atoms after native oxide removal.
ACCESSION #
4227661

 

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