Hydrogen annealed silicon-on-insulator

Sato, Nobuhiko; Yonehara, Takao
October 1994
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1924
Academic Journal
Examines the effects of hydrogen annealing on silicon-on-insulator materials. Reduction of high boron concentration in the materials; Surface characteristics of the insulator after annealing; Migration of silicon atoms after native oxide removal.


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