TITLE

Development of anisotropic microtwin distributions in GaAs grown on 4 degree-off (001) Si by

AUTHOR(S)
Wei, X.L.; Aindow, M.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the development of anisotropic microtwin distributions in gallium arsenide thin films grown on four degree-off (001) silicon surface by molecular beam epitaxy. Use of transmission electron microscopy and Schmide factor analysis; Characteristics of the stresses in the substrate; Introduction of deformation twins during two dimensional growth.
ACCESSION #
4227653

 

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