TITLE

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

AUTHOR(S)
Salvador, A.; Sverdlov, B.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/10/1994, Vol. 65 Issue 15, p1880
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the use of epitaxial liftoff (ELO) in fabricating an indium phosphide(InP)/indium gallium arsenide resonant cavity photodetector on silicon (Si). Use of external mirrors with intermediate gold layer between the Si and ELO InP film; Technique employed for increasing quantum efficiency; Wavelength selectivity in the spectral response.
ACCESSION #
4227645

 

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