TITLE

Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial

AUTHOR(S)
Hinds, B.J.; Schulz, D.L.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p231
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the metalorganic chemical vapor deposition process for phase-pure epitaxial TI-2223 thin films employing a flowing gas thallium annealing process. Characterization of the film; Growth of the precursor films; Measurement of the magnetic hysteresis and surface resistance.
ACCESSION #
4227630

 

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