High-speed InP/GaInAs metal-semiconductor-metal photodetectors grown by chemical beam epitaxy

Debbar, Nacer; Rudra, Alok
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p228
Academic Journal
Reports the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodetectors on indium phosphide substrates. Composition of the photoabsorbing layer; Formation of the Schottky contacts for the detectors; Exhibition of the dark current; Epitaxial growth of the very-high speed MSM detectors.


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