Rapid thermal annealing of MeV erbium implanted LiNbO[sub 3] single crystals for optical doping

Fleuster, M.; Buchal, Ch.
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p225
Academic Journal
Implantation of lithium niobate single crystals with 3.5-MeV erbium ions with fluences up to 3 by 10[sup 16] cm[sup -2]. Epitaxial growth of the implantation-amorphized surface layer in annealing process; Complete dissolution of the grain boundaries; Restoration of a perfect crystal without grain boundaries; Advantage of the short annealing.


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