Effect of point defects on oxygen aggregation in Si at 450 degrees C

Tajima, M.; Warashina, M.
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p222
Academic Journal
Investigates the oxygen aggregation process at 450 degree Celsius. Comparison among the distribution of the interstitial oxygen, thermal donor and the defect responsible for the photoluminescence line; Formation delays of the thermal donor and photoluminescence defect; Retardation of the oxygen aggregation.


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