TITLE

Schottky effect at a metal-polymer interface

AUTHOR(S)
Rikken, G.L.J.A.; Braun, D.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p219
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the observation of the Schottky effect at the interface between a metal and a semiconducting polymer by means of internal photoemission spectroscopy. Information on the electrical properties of the polymer; Presentation of metal-semiconductor-metal heterostructure; Establishment of photoemission to study interfaces of inorganic heterojunctions.
ACCESSION #
4227626

 

Related Articles

  • Charge transfer and doping at organic/organic interfaces. Peisert, H.; Knupfer, M.; Zhang, F.; Petr, A.; Dunsch, L.; Fink, J. // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3930 

    We studied the electronic properties of technically relevant organic/organic interfaces using photoemission spectroscopy. Representatives of organic semiconductors from the family of the phthalocyanines were evaporated onto PEDOT:PSS [mixture of poly-3,4-ethylenedioxy-thiophene and...

  • Reply to ‘‘Comment on ‘Negative capacitance at metal-semiconductor interfaces’ ’’ [J. Appl. Phys. 70, 1090 (1991)]. Wu, X.; Evans, H. L.; Yang, E. S. // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p1089 

    Addresses a critique on a study on negative capacitance at metal- semiconductor interfaces. Cause of capacitance at metal- semiconductor surfaces; Role of minority carriers in the measurement of capacitance; Clarification of the issue of localized states at metal-semiconductor surfaces.

  • Fullerene film on metal surface: Diffusion of metal atoms and interface model. Wen-jie Li; Peng Wang; Xiao-Xiong Wang; Jia-Ou Wang; Rui Wu; Hai-Jie Qian; Kurash Ibrahim; Hai-Yang Li; Hong-Nian Li // Applied Physics Letters;5/12/2014, Vol. 104 Issue 19, p1 

    We try to understand the fact that fullerene film behaves as n-type semiconductor in electronic devices and establish a model describing the energy level alignment at fullerene/metal interfaces. The C60/Ag(100) system was taken as a prototype and studied with photoemission measurements. The...

  • Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions. Vilan, Ayelet // Journal of Applied Physics;2016, Vol. 119 Issue 1, p014504-1 

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of...

  • Achieving high efficiency laminated polymer solar cell with interfacial modified metallic electrode and pressure induced crystallization. Yuan, Yongbo; Bi, Yu; Huang, Jinsong // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p063306 

    We report efficient laminated organic photovoltaic device with efficiency approach the optimized device by regular method based on Poly(3-hexylthiophene-2,5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The high efficiency is mainly attributed to the formation of a concrete...

  • Interface properties of HgCdTe metal-insulator-semiconductor capacitors. Yang, M. J.; Yang, C. H.; Kinch, M. A.; Beck, J. D. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p265 

    The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal-insulator-semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV-1 cm-2 at the...

  • Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes. Saglam, M.; Ayyildiz, E.; G�m�s, A.; T�r�t, A.; Efeoglu, H.; T�zemen, S. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 3, p269 

    An accurate way of determining the series resistance R[sub s] of Schottky Barrier Diodes (SBDs) with and without the interfacial oxide layer using forward current�voltage (I�V) characteristics is discussed both theoretically and experimentally by taking into account the applied voltage...

  • Si[sub 3]N[sub 4]/Si/n-GaAs capacitor with minimum interface density in the 10[sup 10].... Wang, Z.; Lin, M.E.; Biswas, D.; Mazhari, B.; Terguchi, N.; Fan, Z.; Gui, X.; Morkoc, H. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2977 

    Presents the Si[sub 3]N[sub 4]/silicon/gallium arsenide capacitors with minimum interface density. Assistance of atomic hydrogen during in situ growth of silicon; Details on the hysteresis and frequency dispersion levels in the metal-insulator-semiconductor capacitor.

  • Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators.... Belkouch, S.; Jean, C. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p530 

    Examines the buildup of interface states with high field stressing in metal-oxide-semiconductor (MOS) insulators. Use of deep level transient spectroscopy to assess the buildup of interface states; Effect of nitrogen on oxidant diffusion; Relevance of dielectric integrity of gate oxides to MOS...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics