TITLE

Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy

AUTHOR(S)
Mowbray, D.J.; Kowalski, O.P.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p213
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the compositional dependence of the electronic band structure of aluminum gallium indium phosphide grown by molecular beam epitaxy. Use of optical spectroscopic techniques; Variation of the low-temperature, direct excitonic band gap; Rationale for the observed direct-band-gap bowing.
ACCESSION #
4227624

 

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