Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy

Mowbray, D.J.; Kowalski, O.P.
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p213
Academic Journal
Examines the compositional dependence of the electronic band structure of aluminum gallium indium phosphide grown by molecular beam epitaxy. Use of optical spectroscopic techniques; Variation of the low-temperature, direct excitonic band gap; Rationale for the observed direct-band-gap bowing.


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