Epitaxial growth of Fe-doped sapphire thin films from amorphous Al oxide layers deposited on

Ning Yu; Nastasi, Michael
July 1994
Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p180
Academic Journal
Examines the epitaxial growth of thin iron-doped sapphire films from amorphous aluminum oxide layers deposited on sapphire substrates. Occurrence of the growth during a post-annealing process at temperatures of 950 and 1400 degrees Celsius; Use of Rutherford backscattering spectrometry; Implications for the fabrication of thin-film planar optical waveguides.


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